If you meant and can confirm that, I can provide typical characteristics (IDSS, Vgsoff, Yfs, Ciss) based on similar 3SK series devices, but an official manufacturer datasheet is not in my current knowledge base.
The 3SK41 is housed in a standard TO-72 metal can package. Its dual-gate construction is its defining feature, allowing for superior gain control and reduced feedback capacitance compared to single-gate FETs. Ideal for front-end RF amplification.
The is more than just a transistor; it is a snapshot of RF engineering history. Its datasheet reveals a device optimized for stable, high-gain, low-feedback operation in VHF television and radio applications – a true workhorse of its era.
| Parameter | Test Condition | Min | Typ | Max | Unit | | :--- | :--- | :--- | :--- | :--- | :--- | | | VG1S = 0V | 2.5 | 7.0 | 15 | mA | | Gate 1 Cut-off Voltage | ID = 100 µA | -1.5 | -0.8 | -0.3 | V | | Forward Transfer Admittance (Yfs) | f = 100 MHz | 7 | 12 | - | mS | | Input Capacitance (Ciss) | f = 1 MHz | - | 3.5 | 5 | pF | | Reverse Transfer Capacitance (Crss) | f = 1 MHz | - | 0.05 | 0.2 | pF | | Output Capacitance (Coss) | f = 1 MHz | - | 1.8 | 2.5 | pF | | Noise Figure (NF) | f = 200 MHz, optimized | - | 4.0 | 6.0 | dB | | Power Gain (Gps) | f = 200 MHz | 18 | 23 | - | dB |
Suitable for high-speed power management and signal switching. Common Applications